Bestron INSTEMS-ME
In situ straining and biasing inside TEM
Overview
INSTEMS‑ME combines mechanical straining with electrical biasing for coupled in situ TEM experiments, without compromising double‑tilt functionality.
It supports multiple mechanical loading modes plus versatile biasing procedures, enabling correlated mechanical–electrical studies.
Highlights
Coupled straining & biasing
Mechanical loading + electrical biasing
Multiple coupled conditions
Multiple coupled conditions
Mechanical loading
Tension/compression, etc.
Auto, manual, cyclic loading
Auto, manual, cyclic loading
Electrical measurement
Versatile biasing procedures
pA-level measurement
pA-level measurement
Double-tilt + imaging
α tilt up to ±20° * / β up to ±10° *
Spatial resolution ≤ 0.1 nm *
Spatial resolution ≤ 0.1 nm *
Specifications
| Actuation accuracy | < 500 pm |
|---|---|
| Maximum force | > 2 mN |
| Maximum displacement | 2 µm |
| Max output voltage | ± 50 V * |
| Current range | 0 – 60 mA * |
| Alpha (α) tilt | ± 20° * |
| Beta (β) tilt | ± 10° * |
| Tilt accuracy | < 0.1° |
| Spatial resolution | ≤ 0.1 nm * |
* Specifications depend on the TEM and the selected mini-lab / microscope configuration.
Applications
- Semiconductor materials and devices
- Li-ion battery
- Device failure analysis
- Thermoelectric materials
- High-temperature deformation
- Creep deformation
- Piezoelectric materials
- Sensors
- Nanodevices
- Dielectrics
System Components
- Double-tilt holder
- Mini-labs
- Mini-lab transfer box
- Tool kit
- PC & software
- Control unit
