Bestron INSTEMS-E
In situ electrical biasing inside TEM
Overview
INSTEMS‑E is an in situ TEM electrical biasing system for studying devices and materials under applied voltage and current, while maintaining double‑tilt operation.
It supports versatile biasing procedures with pA‑level measurement for sensitive electrical characterization during imaging.
Highlights
Outstanding electrical measurement
Versatile biasing procedures
pA-level measurement
pA-level measurement
Biasing output
Max output voltage ±50 V *
Current range 0–60 mA *
Current range 0–60 mA *
Double-tilt
α tilt up to ±25° *
β tilt up to ±20° *
β tilt up to ±20° *
Stable atomic-scale imaging
Spatial resolution ≤ 0.1 nm *
Specifications
| Max output voltage | ± 50 V * |
|---|---|
| Current range | 0 – 60 mA * |
| Alpha (α) tilt | ± 25° * |
| Beta (β) tilt | ± 20° * |
| Tilt accuracy | < 0.1° |
| Spatial resolution | ≤ 0.1 nm * |
* Specifications depend on the TEM and the selected mini-lab / microscope configuration.
Applications
- Semiconductor materials and devices
- Li-ion battery
- Device failure analysis
- Thermoelectric materials
- High-temperature deformation
- Creep deformation
- Piezoelectric materials
- Sensors
- Nanodevices
- Dielectrics
System Components
- Double-tilt holder
- Mini-labs
- Mini-lab transfer box
- Tool kit
- PC & software
- Control unit
